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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor MJL21193 DESCRIPTION *Total Harmonic Distortion Characterized *High DC Current Gain *High Area of Safe Operation APPLICATIONS *Designed for high power audio output, disk head positioners and linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE -400 -250 -5 UNIT V V Collector Current-Continuous Collector Current-Pulsed Base Current-Continuous ww w scs .i -16 -30 -5 200 150 -65~150 .cn mi e V A A A W PD Tj Tstg Total Power Dissipation (TC=25) Junction Temperature Storage Temperature THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER ThermalResistance Junction To Case VALUE 0.7 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain CONDITIONS IC=-100mA; IB=0 B MJL21193 MIN -250 TYP. MAX UNIT V IC=-8A ;IB=-0.8A B -1.4 -4 -2.2 -0.1 -0.1 -1 75 V V V mA mA A IC=-16A ;IB=-3.2A IC=-8A ; VCE=-5V VCE=-200V,IB=0 VCE= -250V; VBE(off)= -1.5V VEB=-5V; IC=0 Collector Capacitance Current Gain-Bandwidth Product w w scs .i w IC=-8A; VCE=-5V IC=-16A; VCE=-5V IE= 0; f=1MHz ; VCB=-10V .cn mi e 25 8 4 500 pF MHz IC=-1A ;VCE=-10V; ftest=1MHz isc Websitewww.iscsemi.cn 2 |
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